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| DNBT8105 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Collector Current Rating Complementary Version Available (DPBT8105) Lead Free By Design/RoHS Compliant (Note 2) "Green Device" (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) C B Top View E Device Schematic Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM Value 80 60 5 1 2 Unit V V V A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 1) @ TA = 25C Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25C Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 600 209 -55 to +150 Unit mW C/W C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO Min 80 60 5 100 100 80 30 150 Max 100 100 100 300 0.25 0.5 1.1 1.0 10 Unit V V V nA nA nA Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 60V, IE = 0 VCES = 60V VEB = 4V, IC = 0 IC = 1mA, VCE = 5V IC = 500mA, VCE = 5V IC = 1A, VCE = 5V IC = 2A, VCE = 5V IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, VCE = 5V VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: VCE(SAT) VBE(SAT) VBE(ON) Cobo fT V V V pF MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diode's Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DNBT8105 Document number: DS30513 Rev. 9 - 2 1 of 4 www.diodes.com January 2009 (c) Diodes Incorporated DNBT8105 800 700 PD, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN 350 VCE = 5V TA = 125C 300 250 200 150 100 50 0 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 200 RJA = 209 C/W TA = 85C TA = 25C TA = -55C 1 10,000 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 DC Current Gain vs. Collector Current 300 IC/IB = 10 400 350 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 300 250 200 150 100 50 0 100 1,000 10 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 250 200 TA = 125C 150 TA = 85C 100 TA = 25C 50 0 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 VCE = 5V 1.0 TA = -55C 1.0 0.8 TA = 25C 0.8 0.6 T A = 85C TA = 125C 0.6 0.4 0.4 0.2 0.2 0 1 100 10 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0 1 100 10 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current DNBT8105 Document number: DS30513 Rev. 9 - 2 2 of 4 www.diodes.com January 2009 (c) Diodes Incorporated DNBT8105 120 100 CAPACITANCE (pF) 80 60 40 20 0 0 10 15 5 20 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics Ordering Information Part Number DNBT8105-7 Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K81 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: S = 2005) M = Month (ex: 9 = September) K81 Date Code Key Year Code Month Code 2004 R Jan 1 2005 S Feb 2 2006 T Mar 3 2007 U Apr 4 2008 V May 5 YM 2009 W Jun 6 2010 X Jul 7 2011 Y Aug 8 2012 Z Sep 9 2013 A Oct O 2014 B Nov N 2015 C Dec D Package Outline Dimensions A BC H K D J F G L M K1 SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm DNBT8105 Document number: DS30513 Rev. 9 - 2 3 of 4 www.diodes.com January 2009 (c) Diodes Incorporated DNBT8105 Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DNBT8105 Document number: DS30513 Rev. 9 - 2 4 of 4 www.diodes.com January 2009 (c) Diodes Incorporated |
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